Gate-Voltage Response of a One-Dimensional Ballistic Spin Valve without Spin-Orbit Interaction

نویسندگان

  • Maciej Misiorny
  • Carola Meyer
چکیده

Maciej Misiorny and Carola Meyer Department of Microtechnology and Nanoscience MC2, Chalmers University of Technology, SE-412 96 Göteborg, Sweden Faculty of Physics, Adam Mickiewicz University, 61-614 Poznań, Poland Fachbereich Physik, Universität Osnabrück, D-49069 Osnabrück, Germany Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, DE-52 425 Jülich, Germany (Received 17 June 2016; revised manuscript received 21 December 2016; published 9 February 2017)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

متن کامل

Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction

We measured gate voltage-dependent Aharonov–Bohm oscillations in an InGaAs-based two-dimensional electron gas ring with a gate on top of one of the branches. After ensemble averaging, the h=e oscillation spectrum showed smooth oscillatory behavior as a function of the gate voltage. This could be a manifestation of the spin–orbit interaction induced interference. ? 2000 Elsevier Science B.V. All...

متن کامل

Spin injection in indium arsenide

In a two dimensional electron system (2DES), coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET). T...

متن کامل

Strong tuning of Rashba spin-orbit interaction in single InAs nanowires.

A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin-orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin-orbit interaction in InAs nanowires where a strong electric field is created by either a double gate or a solid ele...

متن کامل

Spin Hall current driven by quantum interferences in mesoscopic Rashba rings.

We propose an all-electrical nanostructure where pure spin current is induced in the transverse voltage probes attached to a quantum-coherent ballistic one-dimensional ring when unpolarized charge current is injected through its longitudinal leads. Tuning of the Rashba spin-orbit coupling in a semiconductor heterostructure hosting the ring generates quasiperiodic oscillations of the predicted s...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017